sycan.components.active

Active (nonlinear) devices: diode, MOSFETs, BJT, JFET, vacuum-tube triode.

Modules

bjt	SPICE Gummel-Poon BJT — DC and hybrid-pi AC model (SPICE Q).
diode	Shockley diode — DC and small-signal AC model (SPICE D).
jfet	Shichman-Hodges JFET, polarity-aware (N-JFET / P-JFET).
mosfet_3t	Three-terminal MOSFET — backward-compat shim.
mosfet_4t	Four-terminal segmented MOSFET — L1 strong inversion + matched weak-inversion tail, polarity-aware (NMOS / PMOS), with the bulk node exposed and a long-channel body-effect correction on the threshold.
mosfet_l1	Shichman-Hodges Level 1 MOSFET, polarity-aware (NMOS / PMOS).
mosfet_subthreshold	Sub-threshold MOSFET, polarity-aware (NMOS / PMOS).
triode	Vacuum-tube triode with Langmuir 3/2-power DC law and small-signal AC model derived by differentiation.